A Novel Zero Bias Microstrip MESFET Power Limiter

Khalifa ECHCHAKHAOUI; Elhassane ABDELMOUNIM; Hamid BENNIS; Mohamed LATRACH

Proceedings of the Third International Conference on Computing and Wireless Communication Systems, ICCWCS 2019, April 24-25, 2019, Faculty of Sciences, Ibn Tofaïl University -Kénitra- Morocco

Research Article

A Novel Zero Bias Microstrip MESFET Power Limiter

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@INPROCEEDINGS{10.4108/eai.24-4-2019.2284090,
    author={Khalifa  ECHCHAKHAOUI and Elhassane  ABDELMOUNIM and Hamid  BENNIS and Mohamed  LATRACH},
    title={A Novel Zero Bias Microstrip MESFET Power Limiter},
    proceedings={Proceedings of the Third International Conference on Computing and Wireless Communication Systems, ICCWCS 2019, April 24-25, 2019, Faculty of Sciences, Ibn Tofa\~{n}l University -K\^{e}nitra- Morocco},
    publisher={EAI},
    proceedings_a={ICCWCS},
    year={2019},
    month={5},
    keywords={microstrip power limiter mesfet transistor schottky diode},
    doi={10.4108/eai.24-4-2019.2284090}
}

Khalifa ECHCHAKHAOUI
Elhassane ABDELMOUNIM
Hamid BENNIS
Mohamed LATRACH
Year: 2019
A Novel Zero Bias Microstrip MESFET Power Limiter
ICCWCS
EAI
DOI: 10.4108/eai.24-4-2019.2284090

Khalifa ECHCHAKHAOUI¹^,*, Elhassane ABDELMOUNIM¹, Hamid BENNIS², Mohamed LATRACH³

1: ASTI Laboratory, FST of Settat, Hassan 1St University Settat, Morocco
2: TIM Research Team, EST of Meknes, Moulay Ismail University, Meknes, Morocco
3: RF-EMC Group, ESEO, Angers, France

*Contact email: k.echakhaoui@gmail.com

Abstract

In this article, a novel limiters power is designed and validated by ADS software. The new limiter is based on a mictrostrip circuit and uses MSFET transistors and Schottky diode as actives components. This Power Limiter have been optimized in two steeps: the first circuit is composed of one stage. Simulation of this circuit presents some limitation in termes of limitation rate. To improve this performance, a new circuit composed of two stages is simulated and optimized. The final circuit exhibits 25 dB of limitation rate while insertion loss is -1 dB with a threshold input power level of 0 dBm until a maximum input power level of 30 dBm.

Keywords: microstrip power limiter mesfet transistor schottky diode

Published: 2019-05-23
Publisher: EAI

: http://dx.doi.org/10.4108/eai.24-4-2019.2284090