Proceedings of 2nd International Multi-Disciplinary Conference Theme: Integrated Sciences and Technologies, IMDC-IST 2021, 7-9 September 2021, Sakarya, Turkey

Research Article

A GaAs pHEMT MMIC Doherty Power Amplifier for 5G Mobile Handset

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  • @INPROCEEDINGS{10.4108/eai.7-9-2021.2314954,
        author={Maryam Sajedin and Issa Elfergani and Jonathan Rodriguez and Manuel Violas and Raed Abd-Alhameed and Monica Fernandez-Barciela and Ahmed M. Abdulkhaleq and Chemseddine Zebiri},
        title={A GaAs pHEMT MMIC Doherty Power Amplifier for 5G Mobile Handset},
        proceedings={Proceedings of 2nd International Multi-Disciplinary Conference Theme: Integrated Sciences and Technologies, IMDC-IST 2021, 7-9 September 2021, Sakarya, Turkey},
        publisher={EAI},
        proceedings_a={IMDC-IST},
        year={2022},
        month={1},
        keywords={doherty power amplifier mmic mm-waves},
        doi={10.4108/eai.7-9-2021.2314954}
    }
    
  • Maryam Sajedin
    Issa Elfergani
    Jonathan Rodriguez
    Manuel Violas
    Raed Abd-Alhameed
    Monica Fernandez-Barciela
    Ahmed M. Abdulkhaleq
    Chemseddine Zebiri
    Year: 2022
    A GaAs pHEMT MMIC Doherty Power Amplifier for 5G Mobile Handset
    IMDC-IST
    EAI
    DOI: 10.4108/eai.7-9-2021.2314954
Maryam Sajedin1,*, Issa Elfergani1, Jonathan Rodriguez1, Manuel Violas1, Raed Abd-Alhameed2, Monica Fernandez-Barciela3, Ahmed M. Abdulkhaleq4, Chemseddine Zebiri5
  • 1: Instituto de Telecomunicações, Aveiro, Portugal
  • 2: University, Bradford BD7 1DP, UK
  • 3: AtlanTTic Research Center, Universidade de Vigo 36310, Spain
  • 4: SARAS Technology Limited, Leeds LS12 4NQ, UK
  • 5: Electronics Department, Faculty of Technology. University of Ferhat ABBAS SETIF
*Contact email: Maryam.sajedin@av.it.pt

Abstract

This paper presents the design procedure of a developed Doherty power amplifier (DPA) based on the 0.1-μm AlGaAs–InGaAs pHEMT technology provided by the WIN Semiconductors foundry. It is demonstrated that adapting a driver stage enhances the gain performance of the DPA. The applied wideband post-matching technique can reduce the chip area and improve the average efficiency. The simulation results indicate that the monolithic drive load modulation PA at 4V operation voltage delivers a maximum output power of 29dBm at 1dB compression point. The proposed DPA can provide the 15dB power gain over the frequency range of 25-27 GHz as well as 35% PAE at peak power and 29% PAE at the 6dB OBO. The MMIC load modulation technique is developed for the 5G mobile handset and it occupies the area size of 4-〖mm〗^2.